2007-04-26 bfs483 1 1 6 2 3 5 4 npn silicon rf transistor* ? for low noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma ? f t = 8 ghz, f = 0.9 db at 900 mhz ? two (galvanic) internal isolated transistor in one package ? for orientation in reel see package information below ? pb-free (rohs compliant) package 1) ? qualified according aec q101 * short term description eha07196 6 54 3 2 1 c1 e2 b2 c2 e1 b1 tr1 tr2 esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bfs483 rhs 1=b 2=e 3=c 4=b 5=e 6=c sot363 1 pb-containing package may be available upon special request
2007-04-26 bfs483 2 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 12 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 2 collector current i c 65 ma base current i b 5 total power dissipation 1) t s 40 c p tot 450 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 245 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 12 - - v collector-emitter cutoff current v ce = 20 v, v be = 0 i ces - - 100 a collector-base cutoff current v cb = 10 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 1 v, i c = 0 i ebo - - 1 a dc current gain- i c = 15 ma, v ce = 8 v, pulse measured h fe 70 100 140 - 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
2007-04-26 bfs483 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 25 ma, v ce = 8 v, f = 500 mhz f t 6 8 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.34 0.54 pf collector emitter capacitance v ce = 10 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.13 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 1.1 - noise figure i c = 5 ma, v ce = 8 v, z s = z sopt , f = 900 mhz i c = 5 ma, v ce = 8 v, z s = z sopt , f = 1.8 ghz f - - 0.9 1.4 - - db power gain, maximum stable 1) i c = 15 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz g ms - 19 - db power gain, maximum available 2) i c = 15 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ma - 12.5 - db transducer gain i c = 15 ma, v ce = 8 v, z s = z l = 50 ? , f = 900 mhz i c = 15 ma, v ce = 8 v, z s = z l = 50 ? , f = 1.8 mhz | s 21e | 2 - - 15.5 10 - - db 1 g ms = | s 21 / s 12 | 2 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 )
2007-04-26 bfs483 4 total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 250 300 350 400 mw 500 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0. 1 0.05 0.2 0.1 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2007-04-26 bfs483 5 p ackage sot363 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel for symmetric types no defined pin 1 orientation in reel. small variations in positioning of date code, type code and manufacture are possible. manufacturer 2005, june date code (year/month) bcr108s type code pin 1 marking laser marking 0.3 0.7 0.9 0.65 0.65 1.6 0.2 4 2.15 1.1 8 2.3 pin 1 marking +0.1 0.2 1 6 23 5 4 0.2 2 +0.1 -0.05 0.15 0.1 1.25 0.1 max. 0.9 0.1 a -0.05 6x 0.1 m 0.65 0.65 2.1 0.1 0.1 0.1 min. m 0.2 a pin 1 marking
2007-04-26 bfs483 6 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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